Cargando…

Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In

Radioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counti...

Descripción completa

Detalles Bibliográficos
Autores principales:	Weyer, G, Damgaard, S, Heinemeier, J, Petersen, J W
Lenguaje:	eng
Publicado:	1980
Materias:	Condensed Matter
Acceso en línea:	http://cds.cern.ch/record/879353

Ejemplares similares

Mossbauer study of a complex /sup 119/Sn impurity-defect in gallium phosphide
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980)

Sn impurity defects in germanium from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

$^{119}$Sn Mössbauer study of the implantation behaviour of $^{119}$In, $^{119}$Sn, $^{119m}$Sn, $^{119}$Sb and $^{119m}$Te ions in SiC
por: Petersen, J W, et al.
Publicado: (1985)

Mössbauer Study of a Complex $^{119}Sn$ Impurity Defect in GaP
por: Weyer, G, et al.
Publicado: (1980)

Internal oxidation of sp-impurities in silver studied by $^{119}$Sn Mössbauer spectroscopy
por: Andreasen, H, et al.
Publicado: (1983)

Detection of substitutional and interstitial Fe in silicon by Mossbauer spectrocopy
por: Gunnlaugsson, H P, et al.
Publicado: (2002)

Mössbauer spectroscopy of Fe in silicon with the novel laser-ionized $^{57}$Mn$^{+}$ ion beam at ISOLDE
por: Weyer, G, et al.
Publicado: (1997)

Band structures in /sup 121/Xe and /sup 119/Xe excited by /sup 12/C induced reactions
por: Barci, V, et al.
Publicado: (1981)

The decay of neutron deficient /sup 117,119m+g/, /sup 121m+g/Cs Low lying level structure in /sup 117,119,121/Xe nuclei
por: Genevey, J, et al.
Publicado: (1981)

Lattice location study of ion implanted Sn and Sn-related defects in Ge
por: Decoster, S, et al.
Publicado: (2010)

Defect generation by radioactive decay of light elements in n-type silicon
por: Bollmann, J, et al.
Publicado: (2006)

Magnetic hyperfine fields of vacancy-associated $^{119}$Sn in ion-implanted nickel
por: Weyer, G, et al.
Publicado: (1986)

Combination of emission channeling, photoluminescence and Mossbauer spectroscopy to identify rare earth defect complexes in semiconductors
por: Dalmer, M, et al.
Publicado: (1999)

International Conference on the Applications of the Mössbauer Effect
por: Collective
Publicado: (2002)

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon
por: Weyer, G, et al.
Publicado: (1982)

International Conference on the Industrial Applications of the Mossbauer Effect
por: Gracia, M, et al.
Publicado: (2005)

Isomer shifts and force constants of substitutional $^{119}$Sn impurity atoms in f.c.c. metals
por: Andreasen, H, et al.
Publicado: (1983)

Characterization of defects in semiconductors using radioactive isotopes
por: Deicher, Manfred
Publicado: (2007)

Deep level anomalies in silicon doped with radioactive Au atoms
por: Bollmann, J, et al.
Publicado: (1999)

Radioactive ion beams in solid state physics
por: Forkel-Wirth, Doris
Publicado: (1998)

Radioactive ion beams for solid state research
por: Correia, J G
Publicado: (1995)

Radioactive Ion Beams and Techniques for Solid State Research
por: Correia, J G
Publicado: (1997)

Magnetic hyperfine fields of $^{119}$Sn in vacancy-associated defect structures in 3d ferromagnets
por: Bonde-Nielsen, K, et al.
Publicado: (1987)

Radioactive ions for solid-state investigations at magnetic surfaces and interfaces
por: Bertschat, H H, et al.
Publicado: (2002)

Site selective doping of compound semiconductors by ion implantation of radioactive nuclei
por: Weyer, G, et al.
Publicado: (1980)

Yttrium Oxide Freeze-Casts: Target Materials for Radioactive Ion Beams
por: Kröll, Eva, et al.
Publicado: (2021)

Materials science and biophysics applications at the ISOLDE radioactive ion beam facility
por: Wahl, U
Publicado: (2011)

Evidence for vacancy percolation in highly-doped silicon
por: Müller, E, et al.
Publicado: (1995)

Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods
por: Wieteska, K, et al.
Publicado: (1996)

Radiogenic Sn defects in ion implanted InP
por: Damgaard, S, et al.
Publicado: (1981)

The electronic configuration of substitutional Fe in silicon
por: Weyer, G, et al.
Publicado: (1999)

22nd International Conference on Defects in Semiconductors
por: Bonde Nielsen, K., et al.
Publicado: (2004)

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
por: Ronning, C R, et al.
Publicado: (2000)

Implantation of cobalt in SnO2 thin films studied by TDPAC
por: Schell, Juliana, et al.
Publicado: (2017)

Mössbauer studies of defects in ion implanted metals and semiconductors
por: Weyer, G
Publicado: (1988)

Direct observation of the lattice sites of implanted manganese in silicon
por: da Silva, Daniel José, et al.
Publicado: (2015)

Influence of ion charge on primary defects creation in crystals irradiated by ions
por: Altynov, V A, et al.
Publicado: (2002)

Defect recovery of ion-implantd CdTe
por: Burchard, A, et al.
Publicado: (1996)

Cannot write session to /tmp/vufind_sessions/sess_4tenlibau2j0ieueknskvhlt89