An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology

A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 \mum by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication...

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Detalles Bibliográficos
Autores principales: Chefdeville, M, Colas, P, Giomataris, Ioanis, van der Graaf, H, Heijne, Erik H M, Van der Putten, S, Salm, C, Schmitz, J, Smits, S, Timmermans, J, Visschers, J L
Lenguaje:eng
Publicado: 2005
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2005.11.065
http://cds.cern.ch/record/893063
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author Chefdeville, M
Colas, P
Giomataris, Ioanis
van der Graaf, H
Heijne, Erik H M
Van der Putten, S
Salm, C
Schmitz, J
Smits, S
Timmermans, J
Visschers, J L
author_facet Chefdeville, M
Colas, P
Giomataris, Ioanis
van der Graaf, H
Heijne, Erik H M
Van der Putten, S
Salm, C
Schmitz, J
Smits, S
Timmermans, J
Visschers, J L
author_sort Chefdeville, M
collection CERN
description A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 \mum by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs : primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
id cern-893063
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
record_format invenio
spelling cern-8930632019-09-30T06:29:59Zdoi:10.1016/j.nima.2005.11.065http://cds.cern.ch/record/893063engChefdeville, MColas, PGiomataris, Ioanisvan der Graaf, HHeijne, Erik H MVan der Putten, SSalm, CSchmitz, JSmits, STimmermans, JVisschers, J LAn electron-multiplying "Micromegas" grid made in silicon wafer post-processing technologyDetectors and Experimental TechniquesA technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 \mum by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs : primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.CERN-PH-EP-2005-042DAPNIA-2005-210NIKHEF-2005-017oai:cds.cern.ch:8930632005-09-20
spellingShingle Detectors and Experimental Techniques
Chefdeville, M
Colas, P
Giomataris, Ioanis
van der Graaf, H
Heijne, Erik H M
Van der Putten, S
Salm, C
Schmitz, J
Smits, S
Timmermans, J
Visschers, J L
An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology
title An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology
title_full An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology
title_fullStr An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology
title_full_unstemmed An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology
title_short An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology
title_sort electron-multiplying "micromegas" grid made in silicon wafer post-processing technology
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2005.11.065
http://cds.cern.ch/record/893063
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