Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a...

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Detalles Bibliográficos
Autores principales: Swartz, M., Chiochia, V., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hoermann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, Kirill, Regenfus, Christian, Rohe, T., Sanders, D.A., Son, S., Speer, T.
Lenguaje:eng
Publicado: 2005
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2006.05.002
http://cds.cern.ch/record/893467

Internet

https://dx.doi.org/10.1016/j.nima.2006.05.002
http://cds.cern.ch/record/893467

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