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Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation

Silicon microstrip detectors with n-type implant read-out strips on FZ p-type bulk (n-in-p) show superior charge collection properties, after heavy irradiation, to the more standard p-strips in n-type silicon (p-in-n). It is also well established that oxygen-enriched n- type silicon substrates show...

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Detalles Bibliográficos
Autores principales: Casse, G, Allport, P P, Lozano, M, Martí i García, S, Turner, P R
Lenguaje:eng
Publicado: 2004
Materias:
Acceso en línea:http://cds.cern.ch/record/903041