Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation

Silicon microstrip detectors with n-type implant read-out strips on FZ p-type bulk (n-in-p) show superior charge collection properties, after heavy irradiation, to the more standard p-strips in n-type silicon (p-in-n). It is also well established that oxygen-enriched n- type silicon substrates show better performance, in terms of degradation of the full depletion voltage after charged hadron irradiation, than the standard FZ silicon used for high energy physics detectors. Silicon microstrip detectors combining both the advantages of oxygenation and of n-strip read-out (n-in-n) have achieved high radiation tolerance to charged hadrons. The manufacturing of n-in-n detectors though requires double-sided processing, resulting in more complicated and expensive devices than standard p-in-n. A cheaper single-sided option, that still combines these advantages, is to use n-in-p devices. P-type FZ wafers have been oxygen-enriched by high temperature diffusion from an oxide layer and succesfully used to process miniature (1 multiplied by 1 cm **2) microstrip detectors. These detectors have been irradiated with 24GeV/c protons in the CERN/PS T7 irradiation area up to 7.5 multiplied by 10**1**5cm**-**2. We report results with these irradiated detectors in terms of the charge collection efficiency as a function of the applied bias voltage.