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Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation
Silicon microstrip detectors with n-type implant read-out strips on FZ p-type bulk (n-in-p) show superior charge collection properties, after heavy irradiation, to the more standard p-strips in n-type silicon (p-in-n). It is also well established that oxygen-enriched n- type silicon substrates show...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/903041 |