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Measurement of average electron densities in Si and Ge using MeV delta -rays produced by channelled high-energy projectiles
For the first time, average electron densities in silicon and germanium were measured using the channeling effect for 5 and 12 GeV/c protons,\pi^{+} and\pi^{-}. In the investigation, the yield of MeV electrons emitted through the back of the target was measured. Such delta -ray yields are proportion...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1982
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/0375-9474(82)90428-6 http://cds.cern.ch/record/904175 |