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Characterization of oxygen dimer-enriched silicon detectors
Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the proce...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.06.005 http://cds.cern.ch/record/921716 |