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Characterization of oxygen dimer-enriched silicon detectors

Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the proce...

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Detalles Bibliográficos
Autores principales:	Boisvert, V, Lindström, J L, Moll, M, Murin, L I, Pintilie, I
Lenguaje:	eng
Publicado:	2005
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/j.nima.2005.06.005 http://cds.cern.ch/record/921716

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