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Extraction of electric field in heavily irradiated silicon pixel sensors
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at...
Autores principales: | , , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2006
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.11.247 http://cds.cern.ch/record/936668 |