Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at...

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Detalles Bibliográficos
Autores principales: Dorokhov, A., Allkofer, Y., Amsler, Claude, Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Hormann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, Kirill, Regenfus, Christian, Rohe, T., Sanders, D., Son, S., Speer, T., Swartz, M.
Lenguaje:eng
Publicado: 2006
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2005.11.247
http://cds.cern.ch/record/936668
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author Dorokhov, A.
Allkofer, Y.
Amsler, Claude
Bortoletto, D.
Chiochia, V.
Cremaldi, L.
Cucciarelli, S.
Hormann, C.
Kim, D.
Konecki, M.
Kotlinski, D.
Prokofiev, Kirill
Regenfus, Christian
Rohe, T.
Sanders, D.
Son, S.
Speer, T.
Swartz, M.
author_facet Dorokhov, A.
Allkofer, Y.
Amsler, Claude
Bortoletto, D.
Chiochia, V.
Cremaldi, L.
Cucciarelli, S.
Hormann, C.
Kim, D.
Konecki, M.
Kotlinski, D.
Prokofiev, Kirill
Regenfus, Christian
Rohe, T.
Sanders, D.
Son, S.
Speer, T.
Swartz, M.
author_sort Dorokhov, A.
collection CERN
description A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.
id cern-936668
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2006
record_format invenio
spelling cern-9366682023-03-14T17:07:42Zdoi:10.1016/j.nima.2005.11.247http://cds.cern.ch/record/936668engDorokhov, A.Allkofer, Y.Amsler, ClaudeBortoletto, D.Chiochia, V.Cremaldi, L.Cucciarelli, S.Hormann, C.Kim, D.Konecki, M.Kotlinski, D.Prokofiev, KirillRegenfus, ChristianRohe, T.Sanders, D.Son, S.Speer, T.Swartz, M.Extraction of electric field in heavily irradiated silicon pixel sensorsDetectors and Experimental TechniquesA new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.physics/0412036oai:cds.cern.ch:9366682006
spellingShingle Detectors and Experimental Techniques
Dorokhov, A.
Allkofer, Y.
Amsler, Claude
Bortoletto, D.
Chiochia, V.
Cremaldi, L.
Cucciarelli, S.
Hormann, C.
Kim, D.
Konecki, M.
Kotlinski, D.
Prokofiev, Kirill
Regenfus, Christian
Rohe, T.
Sanders, D.
Son, S.
Speer, T.
Swartz, M.
Extraction of electric field in heavily irradiated silicon pixel sensors
title Extraction of electric field in heavily irradiated silicon pixel sensors
title_full Extraction of electric field in heavily irradiated silicon pixel sensors
title_fullStr Extraction of electric field in heavily irradiated silicon pixel sensors
title_full_unstemmed Extraction of electric field in heavily irradiated silicon pixel sensors
title_short Extraction of electric field in heavily irradiated silicon pixel sensors
title_sort extraction of electric field in heavily irradiated silicon pixel sensors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2005.11.247
http://cds.cern.ch/record/936668
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