Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at...

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Detalles Bibliográficos
Autores principales: Dorokhov, A., Allkofer, Y., Amsler, Claude, Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Hormann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, Kirill, Regenfus, Christian, Rohe, T., Sanders, D., Son, S., Speer, T., Swartz, M.
Lenguaje:eng
Publicado: 2006
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2005.11.247
http://cds.cern.ch/record/936668

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