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Temperature dependent PAC studies with the rare earth '$^{172}$Lu' in ZnO
Wide band-gap semiconductors have become an important base material for applications in optoelectronics and in high power, high temperature electronics. After doping with various rare earths, electroluminescence throughout the whole visible spectrum has been observed. We have studied the implantatio...
| Autores principales: | , |
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| Lenguaje: | eng |
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2005
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| Acceso en línea: | https://dx.doi.org/10.1016/j.optmat.2005.09.065 http://cds.cern.ch/record/941921 |