Lattice sites of implanted Fe in Si

The angular distribution of $\beta^{-}$-particles emitted by the radioactive isotope $^{59}$Fe was monitored following implantation into Si single crystals at fluences from $1.4 \times 10^{12}$ cm$^{-2}$ to $1 \times 10^{14}$ cm$^{-2}$. We identified Fe on three distinct sites: ideal substitutional, displaced substitutional and displaced tetrahedral interstitial. Whereas displaced substitutional Fe was dominating for annealing temperatures below 500 °C, annealing between 500-700 °C caused the majority of Fe to occupy displaced tetrahedral interstitial sites. Ideal substitutional positions were increasingly populated following annealing at 800 °C and above. A comparison of the emission channeling results to Mössbauer and electron paramagnetic resonance experiments is given.