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Influence of O and C co-implantation on the lattice site of Er in GaN
The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.1756196 http://cds.cern.ch/record/985887 |