Influence of O and C co-implantation on the lattice site of Er in GaN

The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all...

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Detalles Bibliográficos
Autores principales: De Vries, Bart, Matias, V, Vantomme, A, Wahl, Ulrich, Rita, E M C, Alves, E, Lima-Lopes, Armandina Maria, Correia, J G
Lenguaje:eng
Publicado: 2004
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1063/1.1756196
http://cds.cern.ch/record/985887
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author De Vries, Bart
Matias, V
Vantomme, A
Wahl, Ulrich
Rita, E M C
Alves, E
Lima-Lopes, Armandina Maria
Correia, J G
author_facet De Vries, Bart
Matias, V
Vantomme, A
Wahl, Ulrich
Rita, E M C
Alves, E
Lima-Lopes, Armandina Maria
Correia, J G
author_sort De Vries, Bart
collection CERN
description The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900 °C does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample.
id cern-985887
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling cern-9858872019-09-30T06:29:59Zdoi:10.1063/1.1756196http://cds.cern.ch/record/985887engDe Vries, BartMatias, VVantomme, AWahl, UlrichRita, E M CAlves, ELima-Lopes, Armandina MariaCorreia, J GInfluence of O and C co-implantation on the lattice site of Er in GaNCondensed MatterThe lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900 °C does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample.CERN-OPEN-2006-046oai:cds.cern.ch:9858872004-05-07
spellingShingle Condensed Matter
De Vries, Bart
Matias, V
Vantomme, A
Wahl, Ulrich
Rita, E M C
Alves, E
Lima-Lopes, Armandina Maria
Correia, J G
Influence of O and C co-implantation on the lattice site of Er in GaN
title Influence of O and C co-implantation on the lattice site of Er in GaN
title_full Influence of O and C co-implantation on the lattice site of Er in GaN
title_fullStr Influence of O and C co-implantation on the lattice site of Er in GaN
title_full_unstemmed Influence of O and C co-implantation on the lattice site of Er in GaN
title_short Influence of O and C co-implantation on the lattice site of Er in GaN
title_sort influence of o and c co-implantation on the lattice site of er in gan
topic Condensed Matter
url https://dx.doi.org/10.1063/1.1756196
http://cds.cern.ch/record/985887
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AT matiasv influenceofoandccoimplantationonthelatticesiteoferingan
AT vantommea influenceofoandccoimplantationonthelatticesiteoferingan
AT wahlulrich influenceofoandccoimplantationonthelatticesiteoferingan
AT ritaemc influenceofoandccoimplantationonthelatticesiteoferingan
AT alvese influenceofoandccoimplantationonthelatticesiteoferingan
AT limalopesarmandinamaria influenceofoandccoimplantationonthelatticesiteoferingan
AT correiajg influenceofoandccoimplantationonthelatticesiteoferingan

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