Cargando…
An Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities
In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisati...
Autores principales: | Lazanu, Ionel, Lazanu, Sorina |
---|---|
Lenguaje: | eng |
Publicado: |
2006
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1142/9789812773678_0132 http://cds.cern.ch/record/997925 |
Ejemplares similares
-
Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
por: Lazanu, Sorina, et al.
Publicado: (2006) -
Energy loss and damage production by heavy ions and strange quark matter in silicon
por: Lazanu, Sorina, et al.
Publicado: (2007) -
Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions
por: Lazanu, Ionel, et al.
Publicado: (2004) -
The modelling of long-term damage after irradiation in silicon for uses at the LHC accelerator and in space mission, and its influence on detector performances
por: Lazanu, Ionel, et al.
Publicado: (2003) -
Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
por: Lazanu, Sorina, et al.
Publicado: (2003)