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Accelerated annealing of n$^+$-p strip detectors irradiated with pions
Charge collection measurements with silicon detectors with implanted n-type readout strips in p-type silicon bulk (n$^+$-p) are presented. Detectors were irradiated with 191 MeV pions at the Paul Scherrer Institute (PSI) in Villigen in Switzerland. Signals induced by electrons from $^{90}$Sr source...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/6/11/P11008 http://cds.cern.ch/record/2634743 |