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Electric field modeling in heavily irradiated silicon detectors based on Edge-TCT measurements
Velocity profiles in heavily irradiated silicon micro-strips detector were investigated by Edge-TCT. The parameters of a simple electric field model assuming two space charge regions at each side of the detector and neutral bulk in-between were extracted from the measurements.
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.22323/1.167.0022 http://cds.cern.ch/record/2634361 |