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Electric ﬁeld modeling in heavily irradiated silicon detectors based on Edge-TCT measurements

Velocity profiles in heavily irradiated silicon micro-strips detector were investigated by Edge-TCT. The parameters of a simple electric field model assuming two space charge regions at each side of the detector and neutral bulk in-between were extracted from the measurements.

Detalles Bibliográficos
Autores principales:	Kramberger, Gregor, Cindro, V, Mandić, I, Mikuž, M, Milovanović, M, Zavrtanik, M
Lenguaje:	eng
Publicado:	2013
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.22323/1.167.0022 http://cds.cern.ch/record/2634361

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