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Investigation of electric field and charge multiplication in silicon detectors by Edge-TCT
A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 $\mu \rm{m}$ was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that t...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/NSSMIC.2009.5402213 http://cds.cern.ch/record/2634363 |