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Investigation of electric field and charge multiplication in silicon detectors by Edge-TCT

A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 $\mu \rm{m}$ was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that t...

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Detalles Bibliográficos
Autores principales:	Kramberger, G, Cindro, V, Mandić, I, Mikuž, M, Zavrtanik, M, Milovanović, M
Lenguaje:	eng
Publicado:	2009
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/NSSMIC.2009.5402213 http://cds.cern.ch/record/2634363

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