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Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors

Recent experiments on silicon detectors developed by the CERN-RD50 collaboration for very high luminosity colliders showed a significant enhancement of the collected charge $Q_c$ in Si detectors irradiated to the fluence of $10^{15} – 10^{16} \ \rm{n}_{eq}/cm^2$ if the devices were operated at high...

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Detalles Bibliográficos
Autores principales: Verbitskaya, E, Eremin, V, Zabrodskii, A, Li, Z, Luukka, P
Lenguaje:eng
Publicado: 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2013.06.086
http://cds.cern.ch/record/2634365