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Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors
Recent experiments on silicon detectors developed by the CERN-RD50 collaboration for very high luminosity colliders showed a significant enhancement of the collected charge $Q_c$ in Si detectors irradiated to the fluence of $10^{15} – 10^{16} \ \rm{n}_{eq}/cm^2$ if the devices were operated at high...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2013.06.086 http://cds.cern.ch/record/2634365 |