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1-Grad total dose evaluation of 65 nm CMOS technology for the HL-LHC upgrades
The radiation tolerance of 65 nm bulk CMOS devices was investigated using 10 keV X-rays up to a Total Ionizing Dose (TID) of 1 Grad. Irradiation tests were performed at room temperature (25°C) as well as at low temperature (−15°C). The implications on the DC performance of n and p channel transistor...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/10/05/C05009 http://cds.cern.ch/record/2159030 |