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1-Grad total dose evaluation of 65 nm CMOS technology for the HL-LHC upgrades

The radiation tolerance of 65 nm bulk CMOS devices was investigated using 10 keV X-rays up to a Total Ionizing Dose (TID) of 1 Grad. Irradiation tests were performed at room temperature (25°C) as well as at low temperature (−15°C). The implications on the DC performance of n and p channel transistor...

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Detalles Bibliográficos
Autores principales:	Menouni, M, Barbero, M, Bompard, F, Bonacini, S, Fougeron, D, Gaglione, R, Rozanov, A, Valerio, P, Wang, A
Lenguaje:	eng
Publicado:	2015
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1088/1748-0221/10/05/C05009 http://cds.cern.ch/record/2159030

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