Cargando…

An annealing study of charge collection efficiency on Float-Zone p-on-n ministrip sensors irradiated with 24 GeV/c protons and 20 MeV neutrons

Float-Zone n-bulk p-readout silicon sensors are currently operated in the tracking layers of many High Energy Physics experiments, where they are exposed to moderate to high fluences of hadrons. Though n-readout sensors, either with p or n bulk, are available and are offering an improved radiation h...

Descripción completa

Detalles Bibliográficos
Autores principales: Pacifico, N, Dolenc-Kittelmann, I, Gabrysch, M, Lucas, C, Moll, M
Lenguaje:eng
Publicado: 2015
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/10/08/P08005
http://cds.cern.ch/record/2149333