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An annealing study of charge collection efficiency on Float-Zone p-on-n ministrip sensors irradiated with 24 GeV/c protons and 20 MeV neutrons
Float-Zone n-bulk p-readout silicon sensors are currently operated in the tracking layers of many High Energy Physics experiments, where they are exposed to moderate to high fluences of hadrons. Though n-readout sensors, either with p or n bulk, are available and are offering an improved radiation h...
Autores principales: | Pacifico, N, Dolenc-Kittelmann, I, Gabrysch, M, Lucas, C, Moll, M |
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Lenguaje: | eng |
Publicado: |
2015
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/10/08/P08005 http://cds.cern.ch/record/2149333 |
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