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Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2 × 10(16) n(eq)/cm(2) and characterized using edge-TCT. It was found that, within the measured fluence range, the active r...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/11/02/P02016 http://cds.cern.ch/record/2255800 |