Charge collection studies in irradiated HV-CMOS particle detectors

Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons f...

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Detalles Bibliográficos
Autores principales: Affolder, A, Andelković, M, Arndt, K, Bates, R, Blue, A, Bortoletto, D, Buttar, C, Caragiulo, P, Cindro, V, Das, D, Dopke, J, Dragone, A, Ehrler, F, Fadeyev, V, Galloway, Z, Gorišek, A, Grabas, H, Gregor, I M, Grenier, P, Grillo, A, Hommels, L B A, Huffman, T, John, J, Kanisauskas, K, Kenney, C, Kramberger, G, Liang, Z, Mandić, I, Maneuski, D, McMahon, S, Mikuž, M, Muenstermann, D, Nickerson, R, Perić, I, Phillips, P, Plackett, R, Rubbo, F, Segal, J, Seiden, A, Shipsey, I, Song, W, Stanitzki, M, Su, D, Tamma, C, Turchetta, R, Vigani, L, Volk, J, Wang, R, Warren, M, Wilson, F, Worm, S, Xiu, Q, Zavrtanik, M, Zhang, J, Zhu, H
Lenguaje:eng
Publicado: IOP 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/11/04/P04007
http://cds.cern.ch/record/2710025
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author Affolder, A
Andelković, M
Arndt, K
Bates, R
Blue, A
Bortoletto, D
Buttar, C
Caragiulo, P
Cindro, V
Das, D
Dopke, J
Dragone, A
Ehrler, F
Fadeyev, V
Galloway, Z
Gorišek, A
Grabas, H
Gregor, I M
Grenier, P
Grillo, A
Hommels, L B A
Huffman, T
John, J
Kanisauskas, K
Kenney, C
Kramberger, G
Liang, Z
Mandić, I
Maneuski, D
McMahon, S
Mikuž, M
Muenstermann, D
Nickerson, R
Perić, I
Phillips, P
Plackett, R
Rubbo, F
Segal, J
Seiden, A
Shipsey, I
Song, W
Stanitzki, M
Su, D
Tamma, C
Turchetta, R
Vigani, L
Volk, J
Wang, R
Warren, M
Wilson, F
Worm, S
Xiu, Q
Zavrtanik, M
Zhang, J
Zhu, H
author_facet Affolder, A
Andelković, M
Arndt, K
Bates, R
Blue, A
Bortoletto, D
Buttar, C
Caragiulo, P
Cindro, V
Das, D
Dopke, J
Dragone, A
Ehrler, F
Fadeyev, V
Galloway, Z
Gorišek, A
Grabas, H
Gregor, I M
Grenier, P
Grillo, A
Hommels, L B A
Huffman, T
John, J
Kanisauskas, K
Kenney, C
Kramberger, G
Liang, Z
Mandić, I
Maneuski, D
McMahon, S
Mikuž, M
Muenstermann, D
Nickerson, R
Perić, I
Phillips, P
Plackett, R
Rubbo, F
Segal, J
Seiden, A
Shipsey, I
Song, W
Stanitzki, M
Su, D
Tamma, C
Turchetta, R
Vigani, L
Volk, J
Wang, R
Warren, M
Wilson, F
Worm, S
Xiu, Q
Zavrtanik, M
Zhang, J
Zhu, H
author_sort Affolder, A
collection CERN
description Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from $^{90}$Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.
id oai-inspirehep.net-1444445
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
publisher IOP
record_format invenio
spelling oai-inspirehep.net-14444452022-08-17T12:59:05Zdoi:10.1088/1748-0221/11/04/P04007http://cds.cern.ch/record/2710025engAffolder, AAndelković, MArndt, KBates, RBlue, ABortoletto, DButtar, CCaragiulo, PCindro, VDas, DDopke, JDragone, AEhrler, FFadeyev, VGalloway, ZGorišek, AGrabas, HGregor, I MGrenier, PGrillo, AHommels, L B AHuffman, TJohn, JKanisauskas, KKenney, CKramberger, GLiang, ZMandić, IManeuski, DMcMahon, SMikuž, MMuenstermann, DNickerson, RPerić, IPhillips, PPlackett, RRubbo, FSegal, JSeiden, AShipsey, ISong, WStanitzki, MSu, DTamma, CTurchetta, RVigani, LVolk, JWang, RWarren, MWilson, FWorm, SXiu, QZavrtanik, MZhang, JZhu, HCharge collection studies in irradiated HV-CMOS particle detectorsDetectors and Experimental TechniquesCharge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from $^{90}$Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.IOPoai:inspirehep.net:14444452016
spellingShingle Detectors and Experimental Techniques
Affolder, A
Andelković, M
Arndt, K
Bates, R
Blue, A
Bortoletto, D
Buttar, C
Caragiulo, P
Cindro, V
Das, D
Dopke, J
Dragone, A
Ehrler, F
Fadeyev, V
Galloway, Z
Gorišek, A
Grabas, H
Gregor, I M
Grenier, P
Grillo, A
Hommels, L B A
Huffman, T
John, J
Kanisauskas, K
Kenney, C
Kramberger, G
Liang, Z
Mandić, I
Maneuski, D
McMahon, S
Mikuž, M
Muenstermann, D
Nickerson, R
Perić, I
Phillips, P
Plackett, R
Rubbo, F
Segal, J
Seiden, A
Shipsey, I
Song, W
Stanitzki, M
Su, D
Tamma, C
Turchetta, R
Vigani, L
Volk, J
Wang, R
Warren, M
Wilson, F
Worm, S
Xiu, Q
Zavrtanik, M
Zhang, J
Zhu, H
Charge collection studies in irradiated HV-CMOS particle detectors
title Charge collection studies in irradiated HV-CMOS particle detectors
title_full Charge collection studies in irradiated HV-CMOS particle detectors
title_fullStr Charge collection studies in irradiated HV-CMOS particle detectors
title_full_unstemmed Charge collection studies in irradiated HV-CMOS particle detectors
title_short Charge collection studies in irradiated HV-CMOS particle detectors
title_sort charge collection studies in irradiated hv-cmos particle detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/11/04/P04007
http://cds.cern.ch/record/2710025
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