Charge collection studies in irradiated HV-CMOS particle detectors

Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons f...

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Detalles Bibliográficos
Autores principales: Affolder, A, Andelković, M, Arndt, K, Bates, R, Blue, A, Bortoletto, D, Buttar, C, Caragiulo, P, Cindro, V, Das, D, Dopke, J, Dragone, A, Ehrler, F, Fadeyev, V, Galloway, Z, Gorišek, A, Grabas, H, Gregor, I M, Grenier, P, Grillo, A, Hommels, L B A, Huffman, T, John, J, Kanisauskas, K, Kenney, C, Kramberger, G, Liang, Z, Mandić, I, Maneuski, D, McMahon, S, Mikuž, M, Muenstermann, D, Nickerson, R, Perić, I, Phillips, P, Plackett, R, Rubbo, F, Segal, J, Seiden, A, Shipsey, I, Song, W, Stanitzki, M, Su, D, Tamma, C, Turchetta, R, Vigani, L, Volk, J, Wang, R, Warren, M, Wilson, F, Worm, S, Xiu, Q, Zavrtanik, M, Zhang, J, Zhu, H
Lenguaje:eng
Publicado: IOP 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/11/04/P04007
http://cds.cern.ch/record/2710025

Internet

https://dx.doi.org/10.1088/1748-0221/11/04/P04007
http://cds.cern.ch/record/2710025

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