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Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU b...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/RADECS.2015.7365582 http://cds.cern.ch/record/2159239 |