Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors

SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU b...

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Detalles Bibliográficos
Autores principales: Secondo, R, Foucard, G, Danzeca, S, Losito, R, Peronnard, P, Masi, A, Brugger, M, Dusseau, L
Lenguaje:eng
Publicado: 2015
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/RADECS.2015.7365582
http://cds.cern.ch/record/2159239
Descripción
Sumario:SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU bursts generation was carried out on an 8 Mbit 90-nm memory and a solution approach using a detection and correction algorithm implemented on an FPGA was investigated.

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