Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors

SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU b...

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Detalles Bibliográficos
Autores principales: Secondo, R, Foucard, G, Danzeca, S, Losito, R, Peronnard, P, Masi, A, Brugger, M, Dusseau, L
Lenguaje:eng
Publicado: 2015
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/RADECS.2015.7365582
http://cds.cern.ch/record/2159239
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author Secondo, R
Foucard, G
Danzeca, S
Losito, R
Peronnard, P
Masi, A
Brugger, M
Dusseau, L
author_facet Secondo, R
Foucard, G
Danzeca, S
Losito, R
Peronnard, P
Masi, A
Brugger, M
Dusseau, L
author_sort Secondo, R
collection CERN
description SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU bursts generation was carried out on an 8 Mbit 90-nm memory and a solution approach using a detection and correction algorithm implemented on an FPGA was investigated.
id oai-inspirehep.net-1467145
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling oai-inspirehep.net-14671452019-09-30T06:29:59Zdoi:10.1109/RADECS.2015.7365582http://cds.cern.ch/record/2159239engSecondo, RFoucard, GDanzeca, SLosito, RPeronnard, PMasi, ABrugger, MDusseau, LAnalysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle DetectorsDetectors and Experimental TechniquesSRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU bursts generation was carried out on an 8 Mbit 90-nm memory and a solution approach using a detection and correction algorithm implemented on an FPGA was investigated.oai:inspirehep.net:14671452015
spellingShingle Detectors and Experimental Techniques
Secondo, R
Foucard, G
Danzeca, S
Losito, R
Peronnard, P
Masi, A
Brugger, M
Dusseau, L
Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
title Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
title_full Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
title_fullStr Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
title_full_unstemmed Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
title_short Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
title_sort analysis and detection of multiple cell upsets in sram memories used as particle detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/RADECS.2015.7365582
http://cds.cern.ch/record/2159239
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AT lositor analysisanddetectionofmultiplecellupsetsinsrammemoriesusedasparticledetectors
AT peronnardp analysisanddetectionofmultiplecellupsetsinsrammemoriesusedasparticledetectors
AT masia analysisanddetectionofmultiplecellupsetsinsrammemoriesusedasparticledetectors
AT bruggerm analysisanddetectionofmultiplecellupsetsinsrammemoriesusedasparticledetectors
AT dusseaul analysisanddetectionofmultiplecellupsetsinsrammemoriesusedasparticledetectors

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