Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose

We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.

Detalles Bibliográficos
Autores principales: Ding, Lili, Gerardin, Simone, Bagatin, Marta, Mattiazzo, Serena, Bisello, Dario, Paccagnella, Alessandro
Lenguaje:eng
Publicado: 2015
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/RADECS.2015.7365655
http://cds.cern.ch/record/2256835

Internet

https://dx.doi.org/10.1109/RADECS.2015.7365655
http://cds.cern.ch/record/2256835

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