Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose

We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.

Detalles Bibliográficos
Autores principales: Ding, Lili, Gerardin, Simone, Bagatin, Marta, Mattiazzo, Serena, Bisello, Dario, Paccagnella, Alessandro
Lenguaje:eng
Publicado: 2015
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/RADECS.2015.7365655
http://cds.cern.ch/record/2256835
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author Ding, Lili
Gerardin, Simone
Bagatin, Marta
Mattiazzo, Serena
Bisello, Dario
Paccagnella, Alessandro
author_facet Ding, Lili
Gerardin, Simone
Bagatin, Marta
Mattiazzo, Serena
Bisello, Dario
Paccagnella, Alessandro
author_sort Ding, Lili
collection CERN
description We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.
id oai-inspirehep.net-1467148
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling oai-inspirehep.net-14671482020-12-14T14:06:20Zdoi:10.1109/RADECS.2015.7365655http://cds.cern.ch/record/2256835engDing, LiliGerardin, SimoneBagatin, MartaMattiazzo, SerenaBisello, DarioPaccagnella, AlessandroRadiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad DoseAccelerators and Storage RingsWe studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.oai:inspirehep.net:14671482015
spellingShingle Accelerators and Storage Rings
Ding, Lili
Gerardin, Simone
Bagatin, Marta
Mattiazzo, Serena
Bisello, Dario
Paccagnella, Alessandro
Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
title Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
title_full Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
title_fullStr Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
title_full_unstemmed Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
title_short Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
title_sort radiation vulnerability in 65 nm cmos i/o transistors after exposure to grad dose
topic Accelerators and Storage Rings
url https://dx.doi.org/10.1109/RADECS.2015.7365655
http://cds.cern.ch/record/2256835
work_keys_str_mv AT dinglili radiationvulnerabilityin65nmcmosiotransistorsafterexposuretograddose
AT gerardinsimone radiationvulnerabilityin65nmcmosiotransistorsafterexposuretograddose
AT bagatinmarta radiationvulnerabilityin65nmcmosiotransistorsafterexposuretograddose
AT mattiazzoserena radiationvulnerabilityin65nmcmosiotransistorsafterexposuretograddose
AT bisellodario radiationvulnerabilityin65nmcmosiotransistorsafterexposuretograddose
AT paccagnellaalessandro radiationvulnerabilityin65nmcmosiotransistorsafterexposuretograddose

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