Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

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In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard...

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Detalles Bibliográficos
Autores principales: Calderini, G, Bagolini, A, Beccherle, R, Bomben, M, Boscardin, M, Bosisio, L, Chauveau, J, Giacomini, G, La Rosa, A, Marchiori, G, Zorzi, N
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.04.118
http://cds.cern.ch/record/2287831

Internet

https://dx.doi.org/10.1016/j.nima.2016.04.118
http://cds.cern.ch/record/2287831

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