Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications

This paper reports the radiation tolerance study of a commercial 65 nm technology, which is a strong candidate for the Large Hadron Collider applications. After exposure to 3 MeV protons till 1 Grad dose, the 65 nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly...

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Detalles Bibliográficos
Autores principales: Ding, Lili, Gerardin, Simone, Bagatin, Marta, Bisello, Dario, Mattiazzo, Serena, Paccagnella, Alessandro
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.03.096
http://cds.cern.ch/record/2287833

Internet

https://dx.doi.org/10.1016/j.nima.2016.03.096
http://cds.cern.ch/record/2287833

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