High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal

A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured proba...

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Detalles Bibliográficos
Autores principales: Scandale, W, Arduini, G, Butcher, M, Cerutti, F, Garattini, M, Gilardoni, S, Lechner, A, Masi, A, Mirarchi, D, Montesano, S, Redaelli, S, Rossi, R, Smirnov, G, Breton, D, Burmistrov, L, Chaumat, V, Dubos, S, Maalmi, J, Puill, V, Stocchi, A, Bagli, E, Bandiera, L, Germogli, G, Guidi, V, Mazzolari, A, Dabagov, S, Murtas, F, Addesa, F, Cavoto, G, Iacoangeli, F, Galluccio, F, Afonin, A G, Chesnokov, Yu A, Durum, A A, Maisheev, V A, Sandomirskiy, Yu E, Yanovich, A A, Kovalenko, A D, Taratin, A M, Denisov, A S, Gavrikov, Yu A, Ivanov, Yu M, Lapina, L P, Malyarenko, L G, Skorobogatov, V V, James, T, Hall, G, Pesaresi, M, Raymond, M
Lenguaje:eng
Publicado: 2016
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1016/j.physletb.2016.07.072
http://cds.cern.ch/record/2261342

Internet

https://dx.doi.org/10.1016/j.physletb.2016.07.072
http://cds.cern.ch/record/2261342

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