Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an inc...

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Detalles Bibliográficos
Autores principales: Mattiazzo, S, Bagatin, M, Bisello, D, Gerardin, S, Marchioro, A, Paccagnella, A, Pantano, D, Pezzotta, A, Zhang, C M, Baschirotto, A
Lenguaje:eng
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/02/C02003
http://cds.cern.ch/record/2275137

Internet

https://dx.doi.org/10.1088/1748-0221/12/02/C02003
http://cds.cern.ch/record/2275137

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