Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an inc...

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Detalles Bibliográficos
Autores principales: Mattiazzo, S, Bagatin, M, Bisello, D, Gerardin, S, Marchioro, A, Paccagnella, A, Pantano, D, Pezzotta, A, Zhang, C M, Baschirotto, A
Lenguaje:eng
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/02/C02003
http://cds.cern.ch/record/2275137
_version_ 1780955149433307136
author Mattiazzo, S
Bagatin, M
Bisello, D
Gerardin, S
Marchioro, A
Paccagnella, A
Pantano, D
Pezzotta, A
Zhang, C M
Baschirotto, A
author_facet Mattiazzo, S
Bagatin, M
Bisello, D
Gerardin, S
Marchioro, A
Paccagnella, A
Pantano, D
Pezzotta, A
Zhang, C M
Baschirotto, A
author_sort Mattiazzo, S
collection CERN
description This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an increase of 2–3 orders of magnitude, while only moderate degradation for other parameters has been observed. For pMOSFETs, a more severe degradation of parameters has been measured, especially in the drain current. This work is relevant as the evaluation of a new generation of CMOS technologies to be used in future HEP experiments.
id oai-inspirehep.net-1513847
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-15138472019-10-15T15:19:45Zdoi:10.1088/1748-0221/12/02/C02003http://cds.cern.ch/record/2275137engMattiazzo, SBagatin, MBisello, DGerardin, SMarchioro, APaccagnella, APantano, DPezzotta, AZhang, C MBaschirotto, ATotal Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 GradDetectors and Experimental TechniquesThis paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an increase of 2–3 orders of magnitude, while only moderate degradation for other parameters has been observed. For pMOSFETs, a more severe degradation of parameters has been measured, especially in the drain current. This work is relevant as the evaluation of a new generation of CMOS technologies to be used in future HEP experiments.oai:inspirehep.net:15138472017
spellingShingle Detectors and Experimental Techniques
Mattiazzo, S
Bagatin, M
Bisello, D
Gerardin, S
Marchioro, A
Paccagnella, A
Pantano, D
Pezzotta, A
Zhang, C M
Baschirotto, A
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
title Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
title_full Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
title_fullStr Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
title_full_unstemmed Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
title_short Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
title_sort total ionizing dose effects on a 28 nm hi-k metal-gate cmos technology up to 1 grad
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/12/02/C02003
http://cds.cern.ch/record/2275137
work_keys_str_mv AT mattiazzos totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT bagatinm totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT bisellod totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT gerardins totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT marchioroa totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT paccagnellaa totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT pantanod totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT pezzottaa totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT zhangcm totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad
AT baschirottoa totalionizingdoseeffectsona28nmhikmetalgatecmostechnologyupto1grad

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