Cargando…

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS proc...

Descripción completa

Detalles Bibliográficos
Autores principales:	Pezzotta, A, Zhang, C M, Jazaeri, F, Bruschini, C, Borghello, G, Faccio, F, Mattiazzo, S, Baschirotto, A, Enz, C
Lenguaje:	eng
Publicado:	2016
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/ESSDERC.2016.7599608 http://cds.cern.ch/record/2262307

Ejemplares similares

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
por: Zhang, C M, et al.
Publicado: (2017)

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs
por: Zhang, Chun-Min, et al.
Publicado: (2017)

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
por: Zhang, Chun-Min, et al.
Publicado: (2018)

Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
por: Zhang, C M, et al.
Publicado: (2017)

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
por: Zhang, C -M, et al.
Publicado: (2018)

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
por: Zhang, Chun-Min, et al.
Publicado: (2019)

A generalized EKV charge-based MOSFET model including oxide and interface traps
por: Zhang, Chun-Min, et al.
Publicado: (2021)

Influence of LDD Spacers and H$^+$ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
por: Faccio, Federico, et al.
Publicado: (2017)

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses
por: Borghello, Giulio, et al.
Publicado: (2018)

Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
por: Nikolaou, Aristeidis, et al.
Publicado: (2019)

Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
por: Gerardin, S, et al.
Publicado: (2015)

Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses
por: Bonaldo, Stefano, et al.
Publicado: (2019)

Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
por: Mattiazzo, S, et al.
Publicado: (2017)

Measurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias
por: Dorda Martin, A, et al.
Publicado: (2023)

Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS
por: Chevas, Loukas, et al.
Publicado: (2018)

Total Ionizing Dose effects on 28nm CMOS Technology
por: Enz, Christian
Publicado: (2018)

Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs
por: Faccio, F, et al.
Publicado: (2015)

Extending a 65nm CMOS process design kit for high total ionizing dose effects
por: Nikolaou, Aristeidis, et al.
Publicado: (2018)

A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment
por: Vergine, Tommaso, et al.
Publicado: (2016)

An additional contribution in the noise spectrum of SOI MOSFETs
por: Faccio, F, et al.
Publicado: (1996)

Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
por: Lee, Jonghwan
Publicado: (2021)

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs
por: Jia, Yupeng, et al.
Publicado: (2023)

Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors
por: Borghello, Giulio, et al.
Publicado: (2021)

TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters
por: Faccio, F, et al.
Publicado: (2010)

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures
por: Ma, Yue, et al.
Publicado: (2022)

Analog performance of SOI MOSFETs up to 25 Mrad (Si)
por: Faccio, F, et al.
Publicado: (1995)

Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments
por: Gonella, L, et al.
Publicado: (2007)

An 8-Channel ASD in 130 nm CMOS for ATLAS Muon Drift Tube Readout at the HL-LHC
por: Fras, Markus, et al.
Publicado: (2018)

A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors
por: Pipino, Alessandra, et al.
Publicado: (2019)

MOSFETs : properties, preparations and performance /
Publicado: (2008)

Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses
por: Borghello, Giulio
Publicado: (2019)

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments
por: Chao, Shou-Yen, et al.
Publicado: (2022)

Expression of nm23‐Hl and nm23‐H2 Proteins in Prostate Carcinoma
por: Konishi, Noboru, et al.
Publicado: (1993)

A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC
por: Paternò, Andrea, et al.
Publicado: (2017)

GigaDB: announcing the GigaScience database
por: Sneddon, Tam P, et al.
Publicado: (2012)

Degradation and Dose-Rate Dependence in Decananometer MOSFETs Exposed to Ultra-High Levels of Total Ionizing Dose
por: Costanzo, Sebastiano
Publicado: (2019)

Power MOSFETS : theory and applications /
por: Grant, Duncan Andrew
Publicado: (1989)

A Prototype of a New Generation Readout ASIC in 65 nm CMOS for Pixel Detectors at HL-LHC
por: Pacher, L., et al.
Publicado: (2018)

Strain-engineered MOSFETs
por: Maiti, CK, et al.
Publicado: (2012)

Strain-Engineered MOSFETs
por: Maiti, CK
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_cf1ga2vcsrn1pknhm43i0moo8a