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Methodologies for the Statistical Analysis of Memory Response to Radiation
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost...
Autores principales: | , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2016
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/TNS.2016.2527781 http://cds.cern.ch/record/2268229 |
_version_ | 1780954714813235200 |
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author | Bosser, Alexandre L Gupta, Viyas Tsiligiannis, Georgios Frost, Christopher D Zadeh, Ali Jaatinen, Jukka Javanainen, Arto Puchner, Helmut Saigne, Frederic Virtanen, Ari Wrobel, Frederic Dilillo, Luigi |
author_facet | Bosser, Alexandre L Gupta, Viyas Tsiligiannis, Georgios Frost, Christopher D Zadeh, Ali Jaatinen, Jukka Javanainen, Arto Puchner, Helmut Saigne, Frederic Virtanen, Ari Wrobel, Frederic Dilillo, Luigi |
author_sort | Bosser, Alexandre L |
collection | CERN |
description | Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1]. |
id | oai-inspirehep.net-1603046 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2016 |
record_format | invenio |
spelling | oai-inspirehep.net-16030462019-09-30T06:29:59Zdoi:10.1109/TNS.2016.2527781http://cds.cern.ch/record/2268229engBosser, Alexandre LGupta, ViyasTsiligiannis, GeorgiosFrost, Christopher DZadeh, AliJaatinen, JukkaJavanainen, ArtoPuchner, HelmutSaigne, FredericVirtanen, AriWrobel, FredericDilillo, LuigiMethodologies for the Statistical Analysis of Memory Response to RadiationOtherMethodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1].oai:inspirehep.net:16030462016 |
spellingShingle | Other Bosser, Alexandre L Gupta, Viyas Tsiligiannis, Georgios Frost, Christopher D Zadeh, Ali Jaatinen, Jukka Javanainen, Arto Puchner, Helmut Saigne, Frederic Virtanen, Ari Wrobel, Frederic Dilillo, Luigi Methodologies for the Statistical Analysis of Memory Response to Radiation |
title | Methodologies for the Statistical Analysis of Memory Response to Radiation |
title_full | Methodologies for the Statistical Analysis of Memory Response to Radiation |
title_fullStr | Methodologies for the Statistical Analysis of Memory Response to Radiation |
title_full_unstemmed | Methodologies for the Statistical Analysis of Memory Response to Radiation |
title_short | Methodologies for the Statistical Analysis of Memory Response to Radiation |
title_sort | methodologies for the statistical analysis of memory response to radiation |
topic | Other |
url | https://dx.doi.org/10.1109/TNS.2016.2527781 http://cds.cern.ch/record/2268229 |
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