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Methodologies for the Statistical Analysis of Memory Response to Radiation

Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost...

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Detalles Bibliográficos
Autores principales: Bosser, Alexandre L, Gupta, Viyas, Tsiligiannis, Georgios, Frost, Christopher D, Zadeh, Ali, Jaatinen, Jukka, Javanainen, Arto, Puchner, Helmut, Saigne, Frederic, Virtanen, Ari, Wrobel, Frederic, Dilillo, Luigi
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TNS.2016.2527781
http://cds.cern.ch/record/2268229
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author Bosser, Alexandre L
Gupta, Viyas
Tsiligiannis, Georgios
Frost, Christopher D
Zadeh, Ali
Jaatinen, Jukka
Javanainen, Arto
Puchner, Helmut
Saigne, Frederic
Virtanen, Ari
Wrobel, Frederic
Dilillo, Luigi
author_facet Bosser, Alexandre L
Gupta, Viyas
Tsiligiannis, Georgios
Frost, Christopher D
Zadeh, Ali
Jaatinen, Jukka
Javanainen, Arto
Puchner, Helmut
Saigne, Frederic
Virtanen, Ari
Wrobel, Frederic
Dilillo, Luigi
author_sort Bosser, Alexandre L
collection CERN
description Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1].
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
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spelling oai-inspirehep.net-16030462019-09-30T06:29:59Zdoi:10.1109/TNS.2016.2527781http://cds.cern.ch/record/2268229engBosser, Alexandre LGupta, ViyasTsiligiannis, GeorgiosFrost, Christopher DZadeh, AliJaatinen, JukkaJavanainen, ArtoPuchner, HelmutSaigne, FredericVirtanen, AriWrobel, FredericDilillo, LuigiMethodologies for the Statistical Analysis of Memory Response to RadiationOtherMethodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1].oai:inspirehep.net:16030462016
spellingShingle Other
Bosser, Alexandre L
Gupta, Viyas
Tsiligiannis, Georgios
Frost, Christopher D
Zadeh, Ali
Jaatinen, Jukka
Javanainen, Arto
Puchner, Helmut
Saigne, Frederic
Virtanen, Ari
Wrobel, Frederic
Dilillo, Luigi
Methodologies for the Statistical Analysis of Memory Response to Radiation
title Methodologies for the Statistical Analysis of Memory Response to Radiation
title_full Methodologies for the Statistical Analysis of Memory Response to Radiation
title_fullStr Methodologies for the Statistical Analysis of Memory Response to Radiation
title_full_unstemmed Methodologies for the Statistical Analysis of Memory Response to Radiation
title_short Methodologies for the Statistical Analysis of Memory Response to Radiation
title_sort methodologies for the statistical analysis of memory response to radiation
topic Other
url https://dx.doi.org/10.1109/TNS.2016.2527781
http://cds.cern.ch/record/2268229
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