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Graphene-based field effect transistors for radiation-induced field sensing

We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribu...

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Detalles Bibliográficos
Autores principales: Di Gaspare, Alessandra, Valletta, Antonio, Fortunato, Guglielmo, Larciprete, Rosanna, Mariucci, Luigi, Notargiacomo, Andrea, Cimino, Roberto
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2015.08.066
http://cds.cern.ch/record/2268718