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Graphene-based field effect transistors for radiation-induced field sensing

We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribu...

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Detalles Bibliográficos
Autores principales: Di Gaspare, Alessandra, Valletta, Antonio, Fortunato, Guglielmo, Larciprete, Rosanna, Mariucci, Luigi, Notargiacomo, Andrea, Cimino, Roberto
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2015.08.066
http://cds.cern.ch/record/2268718
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author Di Gaspare, Alessandra
Valletta, Antonio
Fortunato, Guglielmo
Larciprete, Rosanna
Mariucci, Luigi
Notargiacomo, Andrea
Cimino, Roberto
author_facet Di Gaspare, Alessandra
Valletta, Antonio
Fortunato, Guglielmo
Larciprete, Rosanna
Mariucci, Luigi
Notargiacomo, Andrea
Cimino, Roberto
author_sort Di Gaspare, Alessandra
collection CERN
description We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribution induced by ionization in the underneath absorber, because of the strong variation in the graphene conductivity close to the charge neutrality point. Different 2-dimensional layered materials can be envisaged in this kind of device.
id oai-inspirehep.net-1604146
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling oai-inspirehep.net-16041462019-09-30T06:29:59Zdoi:10.1016/j.nima.2015.08.066http://cds.cern.ch/record/2268718engDi Gaspare, AlessandraValletta, AntonioFortunato, GuglielmoLarciprete, RosannaMariucci, LuigiNotargiacomo, AndreaCimino, RobertoGraphene-based field effect transistors for radiation-induced field sensingDetectors and Experimental TechniquesWe propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribution induced by ionization in the underneath absorber, because of the strong variation in the graphene conductivity close to the charge neutrality point. Different 2-dimensional layered materials can be envisaged in this kind of device.oai:inspirehep.net:16041462016
spellingShingle Detectors and Experimental Techniques
Di Gaspare, Alessandra
Valletta, Antonio
Fortunato, Guglielmo
Larciprete, Rosanna
Mariucci, Luigi
Notargiacomo, Andrea
Cimino, Roberto
Graphene-based field effect transistors for radiation-induced field sensing
title Graphene-based field effect transistors for radiation-induced field sensing
title_full Graphene-based field effect transistors for radiation-induced field sensing
title_fullStr Graphene-based field effect transistors for radiation-induced field sensing
title_full_unstemmed Graphene-based field effect transistors for radiation-induced field sensing
title_short Graphene-based field effect transistors for radiation-induced field sensing
title_sort graphene-based field effect transistors for radiation-induced field sensing
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2015.08.066
http://cds.cern.ch/record/2268718
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AT mariucciluigi graphenebasedfieldeffecttransistorsforradiationinducedfieldsensing
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