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Graphene-based field effect transistors for radiation-induced field sensing
We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribu...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2015.08.066 http://cds.cern.ch/record/2268718 |