Processing of n+/p−/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detec...

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Detalles Bibliográficos
Autores principales: Härkönen, J, Tuovinen, E, Luukka, P, Gädda, A, Mäenpää, T, Tuominen, E, Arsenovich, T, Junkes, A, Wu, X, Li, Z
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.04.069
http://cds.cern.ch/record/2276765

Internet

https://dx.doi.org/10.1016/j.nima.2016.04.069
http://cds.cern.ch/record/2276765

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