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Processing of n+/p−/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates
Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detec...
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2016.04.069 http://cds.cern.ch/record/2276765 |