RadFET dose response in the CHARM mixed-field: FLUKA MC simulations

This paper focuses on Monte Carlo simulations aiming at calculating the dose response of the Rad- FET dosimeter, when exposed to the complex CHARM mixed-fields, at CERN. We study how the dose deposited in the Gate Oxide (SiO2) of the RadFET is affected by the energy threshold variation in the Monte...

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Detalles Bibliográficos
Autores principales: Marzo, M, Bonaldo, S, Brugger, M, Danzeca, S, Garcia Alia, R, Infantino, A, Thornton, A
Lenguaje:eng
Publicado: 2017
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1051/epjconf/201715301006
https://dx.doi.org/10.1051/epjn/2017016
http://cds.cern.ch/record/2314945

Internet

https://dx.doi.org/10.1051/epjconf/201715301006
https://dx.doi.org/10.1051/epjn/2017016
http://cds.cern.ch/record/2314945

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