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RadFET dose response in the CHARM mixed-field: FLUKA MC simulations
This paper focuses on Monte Carlo simulations aiming at calculating the dose response of the Rad- FET dosimeter, when exposed to the complex CHARM mixed-fields, at CERN. We study how the dose deposited in the Gate Oxide (SiO2) of the RadFET is affected by the energy threshold variation in the Monte...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1051/epjconf/201715301006 https://dx.doi.org/10.1051/epjn/2017016 http://cds.cern.ch/record/2314945 |